메뉴 건너뛰기




Volumn 44, Issue 6 PART 1, 1997, Pages 2095-2100

Radiation induced charge in sbmox buried oxides: lack of thickness dependence at low applied fields

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; RADIATION EFFECTS; VOLTAGE MEASUREMENT;

EID: 0031387254     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659023     Document Type: Article
Times cited : (11)

References (8)
  • 1
    • 0029516283 scopus 로고    scopus 로고
    • 42, No. 6, 2114-2121 (1995). [2] H.E. Boesch Jr., T.L. Taylor, L.R. Kite and W.E. Bailey, "Time-Dependent Hole and Electron Trapping Effects in SIMOX Buried Oxides," IEEE Trans. Nucl. Sei., Vol. NS37, No. 6, 1982-1989 (1990). [3] C.A. Permise and H.E. Boesch Jr., "Determination of the Charge-Trapping Characteristics of Buried Oxides Using 10-keV X-ray Source," IEEE Trans. Nucl. Sei., Vol. NS37, No. 6, 1990-1994 (1990).
    • R.K. Lawrence, D.E. loannou, H.L. Hughes, PJ. McMarr and B.J. Mrstik, "Charge Trapping Versus Buried Oxide Thickness for SIMOX Structures," IEEE Trans. Nucl. Sei. NS42, No. 6, 2114-2121 (1995). [2] H.E. Boesch Jr., T.L. Taylor, L.R. Kite and W.E. Bailey, "Time-Dependent Hole and Electron Trapping Effects in SIMOX Buried Oxides," IEEE Trans. Nucl. Sei., Vol. NS37, No. 6, 1982-1989 (1990). [3] C.A. Permise and H.E. Boesch Jr., "Determination of the Charge-Trapping Characteristics of Buried Oxides Using 10-keV X-ray Source," IEEE Trans. Nucl. Sei., Vol. NS37, No. 6, 1990-1994 (1990).
    • "Charge Trapping Versus Buried Oxide Thickness for SIMOX Structures," IEEE Trans. Nucl. Sei. NS
    • Lawrence, R.K.1    Loannou, D.E.2    Hughes, H.L.3    McMarr, P.J.4    Mrstik, B.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.