Suppression of the parasitic bipolar effect in ultra-thin-film nMOSFETs/SIMOX by Ar ion implantation into source/drain regions

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 627-630

  Ohno, Terukazu ^a   Takahashi, Mitsutoshi ^a   Ohtaka, Akihiro ^a   Sakakibara, Yutaka ^a   Tsuchiya, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; HALL EFFECT; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON ON INSULATOR TECHNOLOGY;

ARGON IMPLANTATION; DRAIN VOLTAGE; HALL MOBILITY; PARASITIC BIPOLAR EFFECT; SHEET RESISTANCE; SIMOX;

ULTRATHIN FILMS;

EID: 0029491616     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)