Analytical Model for Electrical and Thermal Transients of Self-Heating Semiconductor Devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 12 PART 2, 1998, Pages 2258-2263

  Zhu, Yu Member ^a   Twynam, John K ^a   Yagura, Motoji ^a   Hasegawa, Masatomo ^a   Hasegawa, Takao ^a   Eguchi, Yoshihito ^a   Yamada, Atsushi ^a   Suematsu, Eiji ^a   Sakuno, Keiichi ^a   Sato, Hiroya ^a   Hashizume, Nobuo ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Feedback; Heterojunction bipolar transistor; Microwave device; MMIC's; Semiconductor device modeling; Semiconductor device thermal factors; Transient analysis

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC NETWORK ANALYSIS; FEEDBACK; FREQUENCY DOMAIN ANALYSIS; MICROWAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; TIME DOMAIN ANALYSIS; TRANSIENTS;

SELF-HEATING SEMICONDUCTOR DEVICES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032302514     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.739207     Document Type: Article

References (25)

1. P. Grossman, and J. Chôma, "Large signal modeling of HBT's including self-heating and transit time effects," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 449-63, 1992
2. K. Lu, P. Mclntosh, C. Snowden, and R. Pollard, "Low-frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBT's," in IEEE MTTS Dig. , 1996, pp. 1373-1376
3. G. Workman, J. Possum, and M. Pelella, "Physical modeling of temperature dependence of SOI CMOS devices and circuits including self-heating," IEEE Trans. Electron Devices, vol. 45, pp. 125-133, 1998
4. B. Tenbroek, M. Lee, W. Redman-White, R. Bunyan, and M. Uren, "Self-heating effects in SOI MOSFET's and measurement by small signal conductance techniques," IEEE Trans. Electron Devices, vol. 43, pp. 2240-2248, 1996
5. R. Joy, and E. Schiig, "Thermal properties of very fast transistors," IEEE Trans. Electron Devices, vol. ED-17, pp. 586-594, 1970
6. Y. Min, A. Palisoc, and C. Lee, "Transient thermal study of semiconductor devices," IEEE Trans. Comp., Hybrids, Manuf. Technol, vol. 13, pp. 980-988, 1990
7. A. Chryssafis and W. Love, "A computer-aided analysis of onedimensional thermal transients in n-p-n power transistors," Solid State Electron., vol. 22, pp. 249-256, 1979
8. S. Clémente, "Transient thermal response of power semiconductor to short power pulse," IEEE Trans. Power Electron., vol. 8, pp. 337-341, 1993
9. Z. Hu. P. Mawby, M. Towers, and K. Board, "Simulation of transient self-heating during power VDMOS transistor turn-off," Int. J. Electron., vol. 77, pp. 525-534, 1994
10. T. Peyretaillade, M. Ferez, S. Mons, R. Sommet. Ph. Auxemery, J. Lalaurie, and R. Quere, "A pulsed-measurement based electrothermal model of HBT with thermal stability prediction capabilities," in IEEE MTTS Int. Microwave Symp. Dig., pp. 1515-1518, 1997.
11. H. Yamaguchi, H. Himi, S. Akita, and T. Morishita, "Analysis of selfheating in SOI high voltage MOS transistor," IEICE Trans. Electron., vol. E80-C, pp. 423-30, 1997
12. P. Baureis, D. Seitzer, and U. Schaper, "Modeling of self-heating in GaAs/AlGaAs HBT's for accurate circuit and device analysis," in GaAs 1C Symp., 1991, pp. 125-128.
13. Y. Suh, T. Roh, Y. Kim, J. Shin, and B. Kim, "A novel extraction method for temperature dependent large signal equivalent circuit model of HBT," in 27th Eumc. Sept. 1997, pp. 97-103
14. J. Sparkes, "Voltage feedback and thermal resistance in junction transistors," Proc. IRE, vol. 46, pp. 1305-1306, 1958
15. Q. Zhang, H. Hu, J. Sitch, R. Surridge, and J. Xu "A new large signal HBT model," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2001-2009, 1996
16. S.M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981
17. P. Munro and F. Ye, "Simulation of current mirror with a self-heating BJT model," IEEEJ. Solid-State Circuits, vol. 26, pp. 1321-1324, 1991
18. D. Zweidinger, R. Fox, J. Brodsky, T. Jung, and S. Lee, "Thermal impedance extraction for bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 342-346, 1996
19. D. Dawson, A. Gupta, and M. Salib, "CW measurement of HBT thermal resistance," IEEE Trans. Electron Devices, vol. 39, pp. 2235-2239, 1992
20. J. Waldrop, K. Wang, and P. Asbeck, "Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement," IEEE Trans. Electron Devices, vol. 39, pp. 1248-1250, 1992
21. W. Liu and A. Yuksel, "A survey of thermal-electric feedback coefficients in GaAs-based heterojuntion bipolar transistors," Solid State Electron., vol. 38, pp. 407-111, 1995
22. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices. Norwood, MA: Artech House, 1993
23. S. Bruce, A. Trasser, M. Birk, A. Rydberg, and H. Schumacher, "Extraction of thermal time constant in HBT's using small signal measurements," Electron. Lett., vol. 33. pp. 165-166, 1997
24. J. Vegte, Feedback Control System. Englewood Cliffs, NJ: PrenticeHall, 1994
25. L. Liou, B. Bayraktaroglu, and C. Huang, "Theoretical thermal runaway analysis of heterojunction bipolar transistors: Junction temperature rise threshold," Solid State Electron., vol. 39, pp. 165-172, 1996.