Analysis of self-heating in soi high voltage mos transistor

IEICE Transactions on Electronics

Volumn E80-C, Issue 3, 1997, Pages 423-429

  Yamaguchii, Hitoshi ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

Electrothermal simulation; High voltage; Self heating; SOI; Temperature rise

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; FINITE ELEMENT METHOD; HEAT RESISTANCE; HEATING; OXIDES; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

ELECTROTHERMAL SIMULATION; NEGATIVE RESISTANCE CHARACTERISTICS;

MOSFET DEVICES;

EID: 0031096739     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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2. H. Yamaguchi, H, Himi, S. Fujino, and T. Hattori, "Temperature rise in intelligent power 1C with partial SOI structure," IEICE Technical Report, SDM-92-144, 1993
3. A. Amerasekera, M. C. Chang, J. A. Seitchik, A. Chatterjee, K.. Mayaram, and J. H. Chen, "Self-heating effects in basic semiconductor structures," IEEE Trans. Electron Devices, vol.40, p. 1836, 1993
4. G. M. Dolny, G. E. Nostrand, and K. E. Hill, "The effect of temperature on lateral DMOS transistors in a power 1C technology," IEEE Trans. Electron Devices, vol. 39, p. 990, 1992
5. E. Arnold, H. Pein, and S. P. Herko, "Comparison of self-heating effects in bulk-silicon and SOI high voltage devices," IEEE IEDM 1994 Tech. Dig., p. 813, 1994
6. L. T. Su, J. E. Chung, D. A. Antoniadis, K. E. Doodson, and M. I. Flik, "Measurement and modeling of selfheating in SOI NMOSFET's," IEEE Trans. Electron Devices, vol.41, p. 69, 1994.