Transient Thermal Response of Power Semiconductors to Short Power Pulses

IEEE Transactions on Power Electronics

Volumn 8, Issue 4, 1993, Pages 337-341

  Steve Clemente, S ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ERROR CORRECTION; PARAMETER ESTIMATION; PRODUCT DESIGN; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC PROPERTIES; TRANSIENTS;

POWER SEMICONDUCTORS; SHORT POWER PULSES; TRANSIENT THERMAL RESPONSE;

SEMICONDUCTOR DEVICES;

EID: 0027681895     PISSN: 08858993     EISSN: 19410107     Source Type: Journal    
DOI: 10.1109/63.261001     Document Type: Article

References (7)

1. D. L. Blackburn, “An electrical technique for the measurement of the peak junction temperature of power transistors,” in Ann. Proc. Reliability Phys., 1975.
2. D. L. Blackburn and F. F. Oettinger, “Transient thermal response measurements of power transistors,” presented at Power Electron. Specialists Conf., 1974.
3. P. Antognetti, G. R. Bisio, F. Curate lli, and S. Palara, “Three-dimensional dimensional transient thermal simulation,” IEEE J. Solid State Circ., June 1980.
4. H. S. Cars law and J. C. Jaeger, Conduction of Heat in Solids. England: Oxford Science, § 2.9.
5. W. J. Parker, R. J. Jenkins, C. P. Butler, and G. L. Abbott, “Flash methods of determining thermal diffusivity,” J. Appl. Phys. Sept. 1961.
6. Carslaw Jaeger, § 3.4.
7. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 2nd ed., ch.1, Fig. 12.