Theoretical thermal runaway analysis of heterojunction bipolar transistors: Junction temperature rise threshold

Solid-State Electronics

Volumn 39, Issue 1, 1996, Pages 165-172

  Liou, L L ^a   Bayraktaroglu, B ^a   Huang, C I ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENT CONTROL; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; HEAT RESISTANCE; NUMERICAL ANALYSIS; STABILITY; TEMPERATURE; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; VOLTAGE CONTROL;

JUNCTION TEMPERATURE RISE THRESHOLD; TEMPERATURE COEFFICIENT; THERMAL RUNAWAY BEHAVIOR;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029735586     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)96867-N     Document Type: Article

References (20)

1. J. A. Higgins, Microwave J. 176, (May 1991).
2. M. G. Adlerstein et al. Electronics Lett. 27, 148 (1991).
3. B. Bayraktaroglu, J. Barrette, L. Kehias, C. I. Huang, R. Fitch, R. Neidhard and R. Scherer, IEEE Electron Device Lett. 14, 493 (1993).
4. W. B. Smith, D. H. Pontius and P. P. Budenstein, IEEE Trans. Electron Devices ED-20, 731 (1973).
5. A. C. English, IEEE Trans. Electron Devices ED-13, 662 (1966).
6. H. A. Schafft and J. C. French, IEEE Trans. Electron Devices ED-13, 613 (1966).
7. F. Bergmann and D. Gerstner, IEEE Trans. Electron Devices ED-13, 630 (1966).
8. G.-B. Gao, M.-Z. Wang, X. Gui and H. Morkoc, IEEE Trans Electron Devices ED-36, 854 (1989).
9. L. L. Liou, J. Ebel and C. I. Huang, IEEE Trans. Electron Devices ED-40, 35 (1993).
10. L. L. Liou and B. Bayraktaroglu, IEEE Trans. Electron Devices ED-41, 629 (1994).
11. W. Liu, S. Nelson, D. G. Hill and A. Khatibzadeh, IEEE Trans. Electron Devices ED-40, 1917 (1993).
12. L. L. Liou, C. I. Huang and J. Ebel, Solid-St. Electron. 35, 579 (1992).
13. M. G. Adlerstein and M. P. Zaitlin, IEEE Trans. Electron Devices ED-38, 1553 (1991).
14. D. S. Whitefield, C. J. Wei and J. C. M. Hwang, IEEE GaAs IC Symp. Tech. Digest 221 (1992).
15. J. R. Waldrop, K. C. Wang and P. M. Asbeck, IEEE Trans. Electron Devices ED-39, 1248 (1992).
16. R. H. Winkler, IEEE Trans. Electron Devices ED-14, 260 (1967).
17. P. D. Maycock, Solid-St. Electron. 10, 161 (1967).
18. W. B. Joyce, Solid-St. Electron. 18, 321 (1975).
19. L. L. Liou, B. Bayraktaroglu and C. I. Huang, Proc. 1993 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, pp. 468-477 (1993).
20. L. L. Liou, B. Bayraktaroglu, C. I. Huang and J. Barrette, IEEE 1993 BCTM Proc. pp. 253-256 (1993).