Determination of Junction Temperature in AIGaAs/ GaAs Heterojunction Bipolar Transistors by Electrical Measurement

IEEE Transactions on Electron Devices

Volumn 39, Issue 5, 1992, Pages 1248-1250

  Waldrop, J R ^a   Wang, K C ^a   Asbeck, P M ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL VARIABLES MEASUREMENT; TRANSISTORS, BIPOLAR - MEASUREMENTS;

COMPOUND SEMICONDUCTORS; HIGH SPEED DEVICES; JUNCTION TEMPERATURE; THERMAL RESISTANCE;

TRANSISTORS, BIPOLAR;

EID: 0026868349     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.129117     Document Type: Article

References (6)

1. For a review, see: H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, p. 13, 1982.
2. H. Ito, T. Ishibashi, and T. Sugeta, “High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-5, p. 214, 1984.
3. H. Beneking and L. M. Su, “GaAlAs/GaAs heterojunction microwave bipolar transistor,” Electron. Lett., vol. 17, p. 301, 1981.
4. J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys., vol. 53, p. R123, 1982.
5. H. S. Carslaw and J. C. Jaeger, Conduction of Heat in Solids. Oxford, UK: Oxford Univ. Press. 1959.
6. R. D. Lindsted and R. J. Surty. “Steady-state junction temperatures of semiconductor chips,” IEEE Trans. Electron Devices, vol. ED-19, p. 41, 1972.