A novel extraction method for temperature dependent large signal equivalent circuit model of HBT

1997 27th European Microwave Conference, EuMC 1997

Volumn 1, Issue , 1997, Pages 97-103

  Suh, Young Suk ^a   Roh, Tai Moon ^b   Kim, Youngsik ^b   Shin, Jinho ^b   Kim, Bumman ^b  

^a Yeungnam University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; CURRENT SOURCE MODELING; DIRECT EXTRACTION; EQUIVALENT CIRCUIT PARAMETER; LARGE SIGNAL EQUIVALENT CIRCUIT MODELS; PARASITIC RESISTANCES; TEMPERATURE DEPENDENT; THERMAL CAPACITANCE;

PARAMETER EXTRACTION; HETEROJUNCTION BIPOLAR TRANSISTORS;

ELECTRIC NETWORK PARAMETERS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; SPECIFIC HEAT OF SOLIDS; THERMAL EFFECTS;

EQUIVALENT CIRCUIT PARAMETER EXTRACTION METHOD; GUMMEL PLOT; PARASITIC RESISTANCE; VOLTAGE DROP;

EID: 0031335878     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1997.337777     Document Type: Conference Paper

References (5)

1. D.S. Whitefield et al., "Temperature-Dependent Large signal Model of Heterojunction bipolar Transistors", 1992 GaAs IC Symposium, pp.221-224
2. Ke. Lu et al., "Low-Frequency dispersion and it's influence on the The Intermodulation Performance of AlGaAs/GaAs HBTs", 1996 IEEE MTT-s Digest, pp. 1373-1376.
3. D. Wu, et al., "A Novel Extraction Method for Accurate Determination of HBT Large-Signal Model Parameters", 1995 IEEE MTT-s Digest, pp. 1235-1238.
4. S.A. Mass et al., "Parameter-Extraction Method for Hetrojunction Bipolar Transistors", IEEE Microwave and guided Wave Lett., 1992, vol. 2, No. 12, pp. 502-504.
5. P. Baureis et al., "Parameter Extraction for HBT's Temperature Dependent Large signal Equivalent Circuit Model", 1993 GaAs IC symposium, pp. 263-266.