A new large signal HBT model

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 11, 1996, Pages 2001-2009

  Zhang, Q M ^a,b   Hu, Huntao ^a,b   Sitch, John ^a,b   Surridge, R K ^a,b   Xu, Jimmy M ^a,b  

^a NORTEL NETWORKS   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; MICROWAVE INTEGRATED CIRCUITS; PARAMETER ESTIMATION;

SOFTWARE PACKAGE SPICE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030285560     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.543955     Document Type: Article

References (10)

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2. P. C. Grossman et al., "Large signal modeling of HBT's including self-heating and transit time effects," IEEE Trans. Microwave Theory Tech., vol. 40, 1992, p. 449.
3. P. Baureis et al., "Modeling of self-heating in GaAs/AlGaAs HBT's for accurate circuit and device analysis," GaAs Ic Symp., p. 12.1, 1991.
4. C. McAndrew, "A complete and consistent electrical/thermal HBT model," IEEE Bipolar Circ. Tech. Meet., Oct. 1992, p. 200.
5. W. Liu et al., "Current transport mechanism in GaInP/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Dev., vol. 40, 1993, p. 1378.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 74, 1981.
7. E. Getreu, Modeling the Bipolar Transistor. Amsterdam, The Netherlands: Elsevier, 1978, p. 140.
8. D. E. Dawson et al., "CW measurement of HBT thermal resistance," IEEE Trans. Electron Dev., vol. 39, 1992, p. 2235.
9. D. R. Pehlke and D. Pavlidis, IEEE Trans. Microwave Theory Tech., vol. 40, no. 12, Dec. 1992, pp. 2367-2373.
10. T. Lester et al., "A manufacturable process for HBT circuits," Proc. 20th Int. Sy. GaAs Related Compounds, 1993.