Two-terminal millimeter-wave sources

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 6, 1998, Pages 739-746

  Eisele, Heribert ^a   Haddad, George I ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GUNN DEVICES; IMPATT DIODES; MILLIMETER WAVES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; TECHNOLOGY;

TWO-TERMINAL MW SOURCES;

MICROWAVE DEVICES;

EID: 0032097043     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.681195     Document Type: Article

References (40)

1. P. P. Huang, T.-W. Huang, H. Wang, E. W. Lin, Y. Shu, S. D. Gee, R. Lai, H. M. Biedenbender, and J. H. Elliott, "A 94-GHz 0.35-W power amplifier module," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2418-2423, Dec. 1997.
2. Y. Hwang, J. Lester, G. Schreyer, G. Zell, S. Schrier, D. Yamauchi, G. Onak, B. Kasody, R. Kono, Y. C. Chen, and R. Lai, "60-GHz highefficiency HEMT MMIC chip set development for high-power solid state power amplifier," in IEEE MTT-S Int. Microwave Symp. Dig, Denver, CO, June 17-21, 1997, pp. 1179-1182.
3. H. Wang, R. Lai, Y. C. Chen, Y. Kok, T. W. Huang, T. Block, D. Streit, P. H. Liu, P. Siegel, and B. Allen, "A 155-GHz monolithic InP-based HEMT amplifier," in IEEE MTT-S Int. Microwave Symp. Dig., Denver, CO, June 17-21, 1997, pp. 1275-1278.
4. S. Weinreb, P. C. Chao, and W. Copp, "Full-waveguide band, 90 to 140 GHz, MMIC amplifier module," in IEEE MTT-S Int. Microwave Symp. Dig., Denver, CO, June 17-21, 1997, pp. 1279-1280.
5. O. S. A. Tang, K. H. G. Duh, S. M. J. Liu, P. M. Smith, W. F. Kopp, T. J. Rogers, and D. J. Pritchard, "A 560-mW 21% power-added efficiency V-band MMIC power amplifier," in Proc. IEEE GaAs 1C Symp., Orlando, FL, Nov. 3-6, 1996, pp. 115-118.
6. H. Eisele and G. I. Haddad, "Active microwave diodes," in Modern Semiconductor Device Physics, S. M. Sze, Ed. New York: Wiley, 1997, ch. 6, pp. 343-407.
7. H. Eisele, R. Kamoua, G. I. Haddad, and C. Kidner, "Active twoterminal devices as local oscillators for low-noise receiver systems at submillimeter-wave frequencies," Arch. Elektrotech., vol. 77, pp. 15-19, 1994.
8. M. Wollitzer, J. Buechler, F. Schäffler, and J.-F. Luy, "D-band Si IMPATT diodes with 300 mW CW output power at 140 GHz," Electron. Lett., vol. 32, pp. 122-123, 1996.
9. H. Eisele and G. I. Haddad, "Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 2498-2503, Dec. 1994.
10. ".D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz," Electron. Lett., vol. 30, pp. 1950-1951, 1994.
11. E. Kasper and J.-F. Luy, "State of the art and future trends in silicon IMPATT diodes for mm-wave seeker requirements," in Proc. Military Microwaves, London, U.K., 1990, pp. 293-298.
12. B. Bayraktaroglu and H. D. Shih, "Integral packaging for millimeterwave GaAs IMPATT diodes prepared by molecular beam epitaxy," Electron. Lett., vol. 19, pp. 327-329, 1983.
13. H. Eisele, "Selective etching technology for 94-GHz GaAs IMPATT diodes on diamond heat sinks," Solid State Electron., vol. 32, pp. 253-257, 1989.
14. Y. E. Ma, "Millimeter-wave active solid-state devices," Millimeter Wave Technol. Ill, vol. SPIE-544, pp. 95-102, 1985.
15. M. G. Adlerstein and S. L. G. Chu, "GaAs IMPATT diodes for 60 GHz," IEEE Electron Device Lett., vol. EDL-5, pp. 97-98, Mar. 1984.
16. K. Akamatsu, A. Yokohata, S. Kalo, N. Ohkuba, and M. Ohmori, "High-efficiency millimeter-wave GaAs Gunn diodes operating in the fundamental mode," in Dig. 19th Int. Conf. Infrared Millimeter Waves, Sendai, Japan, Oct. 17-20, 1994, pp. 89-90.
17. M. Tschernitz and J. Freyer, "140 GHz GaAs double-Read IMPATT diodes," Electron. Lett., vol. 31, pp. 582-583, 1995.
18. H. Eisele and G. I. Haddad, "High-Performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz)," IEEE Microwave Guided Wave Lett., vol. 5, pp. 385-387, Nov. 1995.
19. S. Luryi and A. Zaslavsky, "Quantum-effect and hot-electron devices," in Modern Semiconductor Device Physics, S. M. Sze, Ed. New York: Wiley, 1997, ch. 5, pp. 253-341.
20. E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, "Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes," Appl. Phys. Lett., vol. 58, pp. 2291-2293, 1991.
21. K. D. Stephan, S.-C. Wong, E. R. Brown, K. M. Molvar, A. R. Calawa, and M. J. Manfra, "5-mW parallel-connected resonant tunneling diode oscillator," Electron. Lett., vol. 28, pp. 1411-1412, 1992.
22. M. Reddy, S. C. Martin, A. C. Molnar, R. E. Muller, R. P. Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, H. Kroemer, and S. J. Allen, "Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz," IEEE Electron Device Lett., vol. 18, pp. 218-221, May 1997.
23. E. R. Brown, C. D. Parker, A. R. Calawa, M. J. Manfra, and K. M. Molvar, "A quasi-optical resonant-tunneling-diode oscillator operating above 200 GHz," IEEE Trans. Microwave Theory Tech., vol. 41, pp. 720-722, Apr. 1993.
24. R. Blundell, D. C. Papa, E. R. Brown, and C. D. Parker, "Resonant tunneling diode as an alternative LO for SIS receiver applications," Electron. Lett., vol. 29, pp. 288-290, 1993.
25. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
26. L. Wandinger, "mm-Wave InP Gunn devices: Status and trends," Microwave J., vol. 24, no. 3, pp. 71-78, 1981.
27. B. Fank, J. Crowley, D. Tringali, and L. Wandinger, "Basics and recent applications of high-efficiency millimeter wave InP Gunn diodes," in Proc. 1st Int. Conf. Indium Phosphide Related Materials Advanced Electron. Opt. Devices, SPIE 1144, Norman, OK, Mar. 20-23, 1989, pp. 534-546.
28. I. Dale, J. R. P. Stephens, and J. Bird, "Fundamental-mode graded-gap Gunn diode operation at 77 and 84 GHz," in Proc. Microwaves Conf., London, U.K., Oct. 25-27, 1994, pp. 248-251.
29. S. J. J. Teng and R. E. Goldwasser, "High-performance second-harmonic operation W-band Gunn devices," IEEE Electron Device Lett., vol. 10, pp. 412-414, Sept. 1989.
30. A. Rydberg, "High efficiency and output power from second- and thirdharmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz," IEEE Electron Device Lett., vol. 11, pp. 439-441, Oct. 1990.
31. K. Chang and C. Sun, "Millimeter-wave power-combining techniques," IEEE Trans. Microwave Theory Tech., vol. 31, pp. 91-107, Feb. 1983.
32. H. Eisele and G. I. Haddad, "Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation," IEEE Microwave Guided Wave Lett., vol. 8, pp. 24-26, Jan. 1998.
33. M. Ino, T. Ishibashi, and M. Ohmori, "CW oscillation with p+pn+ silicon IMPATT diodes in 200-GHz and 300-GHz bands," Electron. Lett., vol. 12, pp. 148-149, 1976.
34. J.-F. Luy, K. M. Strohm, H.-E. Sasse, A. Schuppen, J. Buechler, M. Wollitzer, A. Gruhle, F. Schäffler, U. Guettich, and A. Klaen, "Si/SiGe MMIC's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 705-714, Apr. 1995.
35. D. F. Peterson and D. P. Kiemer, "Multiwatt IMPATT power amplification for EHF Applications," Microwave J., vol. 32, no. 4, pp. 107-122, 1989.
36. M. K. Powers, J. McClymonds, D. Vye, and T. Arthur, "Solid-state power amplifier for 61.5 GHz," NASA Tech. Briefs, vol. 16, no. 8, p. 31, 1992.
37. H. Eisele, C.-C. Chen, G. O. Munns, and G. L. Haddad, "The potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results," in IEEE MTT-S Int. Microwave Symp. Dig., San Francisco, CA, June 17-21, 1996, pp. 529-532.
38. H. Eisele and G. I. Haddad, "GaAs single-drift flat-profile IMPATT diodes for CW operation in D-band," Electron. Lett., vol. 28, pp. 2176-2177, 1992.
39. K. Kurokawa, "Noise in synchronized oscillators," IEEE Trans. Microwave Theory Tech., vol. MTT-16, pp. 234-240, Feb. 1968.
40. H. Eisele and G. I. Haddad, "InP Gunn Devices and GaAs TUNNETT diodes as low-noise high-performance local oscillators in fundamental mode," in Proc. 6th Int. Symp. Space Terahertz Technol., Pasadena, CA, Mar. 21-23, 1995, pp. 167-175.