Efficient power combining with D-band (110-170 GHz) InP Gunn devices in fundamental-mode operation

IEEE Microwave and Guided Wave Letters

Volumn 8, Issue 1, 1998, Pages 24-26

  Eisele, Heribert ^a   Haddad, George I ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; HEAT SINKS; MICROWAVE OSCILLATORS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; WAVEGUIDES;

FREE RUNNING OSCILLATORS;

GUNN DEVICES;

EID: 0031647422     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.650977     Document Type: Article

References (5)

1. H. Eisele and G. I. Haddad, "High-performance InP gunn devices for fundamental-mode operation in D-band (110-170 GHz)," IEEE Microwave Guided Wave Lett., vol. 5, pp. 385-387, Nov. 1995.
2. + Gunn devices," in 1997 IEEE MTT-S Dig., 1997, pp. 451-454. .
3. A. K. Talwar, "A dual-diode 73 GHz gunn oscillator," IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 510-512, May 1979.
4. J. J. Sowers, J. D. Crowley, and F. B. Fank, "CW InP Gunn diode power combining at 90 GHz," in 1982 IEEE MTT-S Dig., 1982, pp. 503-505.
5. H. Eisele and G. I. Haddad, "Enhanced performance in GaAs TUNNETT diode oscillators above 100 GHz through diamond heat sinking and power combining," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 2498-2503, Dec. 1994.