C.W. oscillation with p+-p-n+ silicon impatt diodes in 200 ghz and 300 ghz bands

Electronics Letters

Volumn 12, Issue 6, 1976, Pages 148-149

  Ino, M ^a   Ishibashi, T ^a   Ohmori, M ^a  

^a Musashino Electrical Communication Lab   (Japan)

Author keywords

Impart devices; Ion implantation; Semiconductor device manufacture; Solid state microwave devices

Indexed keywords

SEMICONDUCTOR DIODES, IMPATT;

EID: 0016930134     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19760115     Document Type: Article

References (6)

1. BOWMAN, L. S., and BURRUS, C. A.: ‘Pulse-driven silicon p-n junction avalanche oscillators for the 09 to 20 mm band’, IEEE Trans., 1967, ED-14, pp. 411-418
2. ISHIBASHI, T., and OHMORI, M.: ‘200 GHz, 50 mW CW oscillation with Si SDR IMPATT diodes’ (to be published)
3. CULSHAW, B.: ‘Effect of carrier diffusion on operation of avalanche diodes’, Electron. Lett., 1974, 10, pp. 143-144
4. SZE, S. M., and IRVIN, J. C.: ‘Resistivity, mobility, and impurity levels in GaAs, Ge, and Si at 300 K’, Solid-State Electron., 1968, 11, pp. 599-602
5. OHMORI, M., ISHIBASHI, T., MAKIMURA, T., and ONO, S.: ‘Design of Si IMPATT diodes for high-frequency operation’. Paper at technical group on electronic devices, IECE. Japan, ED-75-72, 1976
6. YAMAZAKI, H., INO, M., and MAKIMURA, T.: ‘Boron ion implantation into Si (DDR IMPATT diodes)’. Proceedings of 5th symposium on ion implantation into semiconducters, Japan, 1974, pp. 73-76