Millimeter-wave active solid-state devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 544, Issue , 1985, Pages 95-102

  Ma, Y E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MILLIMETER WAVES; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR DEVICES, GUNN EFFECT; SEMICONDUCTOR DIODES, IMPATT; TRANSISTORS, FIELD EFFECT;

DISTRIBUTED IMPATTS; GALLIUM ARSENIDE DEVICES; INDIUM PHOSPHIDE DEVICES; MILLIMETER-WAVE DEVICES; SILICON DEVICES;

SOLID STATE DEVICES;

EID: 0022182169     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.948259     Document Type: Conference Paper

References (6)

1. Y. E. Ma, E. M. Nakaji, and M. F. Thrower, V-Band Double-Drift Read Silicon IMPATTs, 1984 IEEE MTT-S International Microwave Symposium Digest, pp. 167-168.
2. L. H. Holway, et al., High Power Pulsed Avalanche Diodes, Raytheon Company Final Technical Report to U.S. Air Force Avionics Laboratory, AFWAL-TR-80-1212; Contract No. F33615-78-C-1499, Feb. 1981.
3. M. Franz and J. B. Beyer, “The Traveling-Wave IMPATT Mode, ” IEEE Trans. Microwave Theory and Tech. Vol. MTT-26, Nov. 1978, pp. 861-865.
4. B. Bayraktaroglu and H. D. Shih, “Millimeter-Wave GaAs Distributed IMPATT Diodes, ” IEEE Electron Device Lett. Vol. EDL-4, Nov. 1983, pp. 393-395.
5. E. T. Watkins, “GaAs FET Amp Uses One- Quarter Micron Gate, Heralding MIC Opportunities at Up to 60 GHz, ” Microwave System News, Vol. 13, Dec. 1983, pp. 52-62.
6. D. W. Maki, et al., “A 69 GHz Monolithic FET Oscillator, ” 1984 IEEE Microwave and Millimeter-wave Monolithic Circuits Symposium Digest, pp. 62-66.