D-band Si-IMPATT diodes with 300mW CW output power at 140GHz

Electronics Letters

Volumn 32, Issue 2, 1996, Pages 122-123

  Wollitzer, M ^a   Buechler, J ^a   Schaffler F ^a   Luy, J F ^a  

^a DAIMLER AG   (Germany)

Author keywords

Impatt diodes; Microwave diodes

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTRONS; ELECTROPLATING; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON;

DIAMOND HEATSINK; DOPPLER SENSORS; MICROWAVE DIODES; SINGLE DRIFT DIODES; THERMOCOMPRESSION BONDING;

IMPATT DIODES;

EID: 0029734349     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960088     Document Type: Article

References (8)

1. RUSSER, P., BIEBL, E., and HEINRICH, W.: 'Planar millimeterwave circuits on silicon'. Proc. Int. Workshop of German IEEE Joint MTT/AP Chapter: 'Silicon based high frequency devices and circuits'. Schloß Reisenburg, Günzburg, 10-11 November 1994
2. LUY, J.-F.: 'Si/SiGe MMICs', IEEE Trans., 1995, MTT-453, pp. 705-714
3. WENGER, J.: '140GHz 70mW CW output power with n-type silicon single-drift IMPATT diodes', Electron. Lett., 1983, 19, pp. 908-909
4. CHANG, K., THROWER, W.F., and HAYASHIBARA, M.: 'Millimeterwave silicon IMPATT sources and combiners for the 110-260GHz range', IEEE Trans., 1981, MTT-29, pp. 1278-1284
5. KUNO, H.J.: 'Solid state millimeter-wave power sources and combiners', Microw. J., 1981, 24, pp. 21-34
6. WOLLITZER, M., LUY, J.-F., and BÜCHLER, J.: 'D-band high power IMPATTs made by MBE'. Proc. Int. Workshop of German IEEE Joint MTT/AP Chapter: 'Silicon based high frequency devices and circuits'. Schloß Reisenburg, Günzburg, 10-11 November 1994
7. LUY, J.F. in LUY, J.F., and RUSSER, P. (Eds.): 'Silicon-based millimeter-wave devices (Springer series in electronics and photonics: 32, 1992), Chap. 2
8. WENGER, J., and HUBER, S.: 'Low-noise D-band IMPATT oscillators', Electron. Lett., 1987, 23, pp. 475-476