155-GHz monolithic InP-based HEMT amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1275-1278

  Wang, H ^a   Lai, R ^a   Chen, Y C ^a   Kok, Y L ^a   Huang, T W ^a   Block, T ^a   Streit, D ^a   Liu, P H ^a   Siegel, P ^a   Allen, B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

MONOLITHIC LOW NOISE AMPLIFIER;

MICROWAVE AMPLIFIERS;

EID: 0030700154     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)