High-Performance Second-Harmonic Operation W-Band GaAs Gunn Diodes

IEEE Electron Device Letters

Volumn 10, Issue 9, 1989, Pages 412-414

  Goldwasser, Robert E ^b  

^a Alpha Industries Inc Central Microwave Subsidiary ^*  (United States)

^b Alpha Industries Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE;

CONVERSION EFFICIENCY; GUNN OSCILLATORS; SECOND HARMONIC OPERATION;

SEMICONDUCTOR DIODES, GUNN;

EID: 0024732868     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.34726     Document Type: Article

References (4)

1. T. G. Rutten, “Gunn diode oscillator at 95 GHz,” Electron. Lett., vol. 11, pp. 293-294, 1975.
2. H. Barth, “A wideband backshort-tunable second harmonic W-band Gunn oscillator,” in Proc. IEEE-MTT-S Symp., 1981, pp. 825-826.
3. W. H. Haydl, “Fundamental and harmonic operation of millimeterwave Gunn diodes,” IEEE Trans. Microwave Theory Tech., vol. MTT-31, no. 11, pp. 879-889, 1983.
4. H. T. Lam and G. A. Acket, “Comparison of the microwave velocity/ field characteristics of n-type InP and n-type GaAs,” Electron. Lett., vol. 7, pp. 722-723, 1971.