Enhanced Performance in GaAs TUNNETT Diode Oscillators Above 100 GHz Through Diamond Heat Sinking and Power Combining

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 12, 1994, Pages 2498-2503

  Eisele, Heribert ^a   Haddad, George I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; HEAT SINKS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING DIAMONDS; SEMICONDUCTING GALLIUM ARSENIDE;

DIAMOND HEAT SINKING; GALLIUM ARSENIDE TUNNETT DIODE OSCILLATORS; POWER COMBINING; SELECTIVE ETCHING TECHNOLOGIES;

TRANSIT TIME DEVICES;

EID: 0028735807     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.339788     Document Type: Article

References (18)

1. C. Kidner, H. Eisele, and G. I. Haddad, “Tunnel injection transit-time diodes for W-band power generation,” Electron. Lett., vol. 28, no. 5, pp. 511–513, 1992.
2. “A CW GaAs TUNNETT diode source for 100 GHz and above,” Proc. 22nd European Microwave Conf., Helsinki, Finland, August 24–27, 1992, pp. 467–472.
3. H. Eisele, R. Kamoua, G. I. Haddad, and C. Kidner, “Active two-terminal devices as local oscillators for low-noise receiver systems at submillimeter wave frequencies,” Arch. Elektrotechnik, vol. 77, no. 1, pp. 15–19, 1994.
4. H. Eisele, “Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks,” Solid-State Electronics, vol. 32, no. 3, pp. 253–257, 1989.
5. H. Eisele and G. I. Haddad, “GaAs single-drift flat-profile IMPATT diodes for CW operation in D Band,” Electron. Lett., vol. 28, no. 23, pp. 2176–2177, 1992.
6. “GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above,” IEEE Trans. Microwave Theory Tech., to appear.
7. “Recent experimental results from GaAs TUNNETT diodes above 100 GHz,” Proc. Internat. Conf. Millimeter Submillimeter Waves Appl., San Diego, Calif., 1994.
8. B. Fank, J. Crowley, D. Tringali, and L. Wandinger, “Basics and recent applications of high-efficiency millimeter wave InP Gunn diodes,” Proc. First Internat. Conf. Indium Phosphide Related Materials Adv. Electron. Optical Devices, Norman, OK, 1989, pp. 534–546.
9. I. G. Eddison, et al., “Efficient fundamental frequency oscillation from mm-wave InP n+-n-n+ TEOs,” Electron. Lett., vol. 17, no. 20, pp. 758–760, 1981.
10. S. J. J. Teng and R. E. Goldwasser, “High performance second-harmonic operation W-band GaAs Gunn diodes,” IEEE Electron. Device Lett., vol. EDL-10, no. 9, pp. 412–414, 1989.
11. Y. Shu, “A CW 94 GHz Gunn oscillator with 100 mW output power and 12 GHz mechanical tuning range,” Digest Internat. Conf. Millimeter Submillimeter Waves Appl., San Diego, Calif., vol. SPIE 2250, pp. 71–72, 1994.
12. L. W. Holway and M. G. Adlerstein, “Approximate formulas for the thermal resistance of IMPATT diodes compared with computer calculations,” IEEE Trans. Electron Devices, vol. ED-24, no. 2, pp. 156–159, 1977.
13. R. H. Haitz, H. L. Stover, and N. J. Tolar, “A method for heat flow resistance measurements in avalanche diodes,” IEEE Trans. Electron. Devices, vol. ED-16, no. 5, pp. 438–444, 1969.
14. H. Eisele, “Theorie, Technologie und Untersuchung von Lawinen-laufzeitdioden aus MBE-GaAs für W-Band Frequenzen,” Ph.D. dissertation, Technical University of Munich, Germany, 1989.
15. X. Zhang, “Herstellung und Untersuchung von GaAs- Lawinenlaufzeitdioden für 60 GHz,” Ph.D. dissertation, Technical Univ. Munich, Germany, 1984.
16. A. Rydberg, “High efficiency and output power from second- and third-harmonic harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz,” IEEE Electron. Device Lett., vol. EDL-11, no. 10, pp. 439–441, 1990.
17. A. K. Talwar, “A dual-diode 73 GHz Gunn oscillator,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, no. 5, pp. 510–5 1 2, 1979.
18. J. J. Sowers, J. D. Crowley, and F. B. Fank, “CW InP Gunn diode power combining at 90 GHz,” 1982 IEEE MTT’-S Digest, pp. 503–505, 1982.