Potential of InP IMPATT diodes as high-power millimeter-wave sources: First experimental results

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 529-534

  Eisele, H ^a   Chen, C C ^a   Munns, G O ^a   Haddad, G I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GUNN DEVICES; HEAT SINKS; MATHEMATICAL MODELS; MILLIMETER WAVE DEVICES; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH POWER MILLIMETER WAVE SOURCES; RADIO FREQUENCY POWER LEVELS;

IMPATT DIODES;

EID: 0029722518     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)