High-Performance InP Gunn Devices for Fundamental-Mode Operation in D-Band (110-170 GHz)

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 11, 1995, Pages 385-387

  Eisele, Heribert ^a   Haddad, George I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FREQUENCY MEASUREMENT; ETCHING; FREQUENCIES; HEAT LOSSES; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; WAVEGUIDE COMPONENTS;

D-BAND FREQUENCIES; DC TO RF CONVERSION EFFICIENCY; DOPING PROFILE; FUNDAMENTAL MODE OPERATION; OUTPUT POWER; PHASE NOISE; POWER LEVELS;

GUNN DEVICES;

EID: 0029403315     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.473534     Document Type: Article

References (11)

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