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Volumn 28, Issue 23, 1992, Pages 2176-2177

GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

Author keywords

Diodes; Microwave devices; Semiconductor devices

Indexed keywords

DESIGN; HEAT SINKS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH;

EID: 0027112865     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921396     Document Type: Article
Times cited : (26)

References (10)
  • 1
    • 0021386128 scopus 로고
    • High efficiency V-band GaAs IMPATT diodes
    • MA, Y. E., BENKO, E., and TRINH, T.: ‘High efficiency V-band GaAs IMPATT diodes’, Electron. Lett., 1984, 20, pp. 212-214
    • (1984) Electron. Lett. , vol.20 , pp. 212-214
    • MA, Y.E.1    BENKO, E.2    TRINH, T.3
  • 3
    • 0021482408 scopus 로고
    • High-efficiency single-drift GaAs IMPATT diodes for 72 GHz
    • ZHANG, X., and FREYER, J.: ‘High-efficiency single-drift GaAs IMPATT diodes for 72 GHz’, Electron. Lett, 1984, 20, pp. 752-754
    • (1984) Electron. Lett , vol.20 , pp. 752-754
    • ZHANG, X.1    FREYER, J.2
  • 4
    • 0040875527 scopus 로고
    • GaAs W-band IMPATT diodes: the first step to higher frequencies
    • EISELE, H.: ‘GaAs W-band IMPATT diodes: the first step to higher frequencies’, Microwave J., 1991, 34, pp. 275-282
    • (1991) Microwave J. , vol.34 , pp. 275-282
    • EISELE, H.1
  • 5
    • 0025232937 scopus 로고
    • GaAs W-band IMPATT diodes for very low-noise oscillators
    • EISELE, H.: ‘GaAs W-band IMPATT diodes for very low-noise oscillators’, Electron. Lett., 1990, 26, pp. 109-110
    • (1990) Electron. Lett. , vol.26 , pp. 109-110
    • EISELE, H.1
  • 8
    • 0026137029 scopus 로고
    • Electron properties in GaAs for the design of mm-wave IMPATTS
    • EISELE, H.: ‘Electron properties in GaAs for the design of mm-wave IMPATTS’, Int. J. Infrared and Millimeter Waves, 1991, 4, pp. 345-354
    • (1991) Int. J. Infrared and Millimeter Waves , vol.4 , pp. 345-354
    • EISELE, H.1
  • 9
    • 0024630858 scopus 로고
    • Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks
    • EISELE, H.: ‘Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks’, Solid-State Electron., 1989, 32, pp. 253-257
    • (1989) Solid-State Electron. , vol.32 , pp. 253-257
    • EISELE, H.1
  • 10
    • 0026821221 scopus 로고
    • Tunnel injection transittime diodes for W-band power generation
    • KIDNER, C., EISELE, H., and HADDAD, G. I.: ‘Tunnel injection transittime diodes for W-band power generation’, Electron. Lett., 1992, 28, pp. 511-513
    • (1992) Electron. Lett. , vol.28 , pp. 511-513
    • KIDNER, C.1    EISELE, H.2    HADDAD, G.I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.