140 GHz GaAs double-Read IMPATT diodes

Electronics Letters

Volumn 31, Issue 7, 1995, Pages 582-583

  Tschernitz, M ^a   Freyer, J ^a  

^a Angewandte Elektronik ^*  (Germany)

Author keywords

Gallium arsenide; IMPATT diodes

Indexed keywords

CURRENT DENSITY; EFFICIENCY; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC LOSSES; FREQUENCIES; IMPEDANCE MATCHING (ELECTRIC); OHMIC CONTACTS; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

CONVERSION EFFICIENCY; D BAND FREQUENCIES; DIODE DESIGN; MODULE ENCAPSULATION; OHMIC LOSSES; TITANIUM SCHOTTKY CONTACT;

IMPATT DIODES;

EID: 0029275310     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950390     Document Type: Article

References (7)

1. EISELE, H., and HADDAD, G.I. ‘GaAs single-drift flat-profile IMPATT diodes for CW operation at D-band’, Electron, Lett, 1992, 28, pp. 2176-2177
2. TSCHERNITZ, M., FREYER, J., and GROTHE, H.: ‘GaAs single-drift Read-type IMPATT diodes for D-band’, Electron. Lett., 1994, 30, (13), pp. 1070-1071
3. PöBL, M., BOGNER, W., and GAUL, L.: ‘CW GaAs MITTAT source on copper heatsink up to 160 GHz’, Electron. Lett., 1994, 30, (16), pp. 1316-1317
4. TSCHERNITZ, M., and FREYER, J.: ‘Design and realization of GaAs D-band IMPATT oscillators’. Proc. Fifth Int. Symp. Space Terahertz Technology, University of Michigan, 1994, p. 611
5. ALDERSTEIN, M.G., and CHU, S.L.G.: ‘GaAs IMPATT diodes for 60 GHz’, IEEE Electron Device Lett., 1984, 5, p. 97
6. GAUL, L.; ‘Groβsignal und Stabilitätsanalyse von GaAs- Lawinendioden für Puls- und Leistungsozillatoren im Millimeterwellenbereich’. PhD thesis, TU-München, 1993
7. JELENSKJ, A., GRÜB, A., KROZER, V., and HARTNAGEL, H.L.: ‘New approach to the design and the fabrication of THz Schottky barrier diodes’, IEEE Trans., 1993, MTT-41, pp. 549-557