GaAs IMPATT Diodes for 60 GHz

IEEE Electron Device Letters

Volumn 5, Issue 3, 1984, Pages 97-98

  Adlerstein, M G ^a   Chu, S L G ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, IMPATT;

EID: 0021398841     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1984.25844     Document Type: Article

References (6)

1. J. Perdomo and C. Lee, “Intrinsic response time measurements and nonuniform field avalance regions in GaAs,” IEEE Trans. Electron Devices, vol. ED-30, p. 217-223, Mar. 1983.
2. R. K. Mains, G. I. Haddad, and P. A. Blakey, “Simulation of GaAs IMPATT diodes including energy and velocity transport equations,” IEEE Trans. Electron Devices, vol. ED-30, Oct. 1983, to be published.
3. W. E. Hoke and W. L. Labossier, “Molecular beam epitaxial growth of GaAs millimeter-wave IMPATT diode material,” J. Vac. Sci. and Tech., 1983, to be published.
4. M. G. Adlerstein and E. L. Moore, “Microwave properties of GaAs IMPATT diodes at 33 GHz,” in Proc. 8th Biennial Cornell Conf. Microwave Semiconductor Devices and Circuits, Aug. 1981, p. 375-384.
5. M. G. Adlerstein, L. H. Holway, Jr., and S. L. G. Chu, “Measurement of series resistance in IMPATT diodes,” IEEE Trans. Electron Devices, vol. ED-30, p. 179-182, Feb. 1983.
6. T. Misawa and N. D. Kenyon, “An oscillator circuit with cap structure for millimeter wave IMPATT diodes,” IEEE Trans. Microwave Theory Tech., vol. MTT-18, p. 696, 1970.