Characteristics of InGaN multi-quantum-well-structure laser diodes

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 1135-1142

  Nakamura, S ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTROMAGNETIC WAVE EMISSION; SEMICONDUCTING INTERMETALLICS; SEMICONDUCTOR LASERS;

EMISSION WAVELENGTH; MULTIQUANTUM WELL STRUCTURES; NITRIDE SEMICONDUCTORS; THRESHOLD CURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030706441     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)