Photoluminescence study of high quality InGaN-GaN single heterojunctions

Applied Physics Letters

Volumn 69, Issue 5, 1996, Pages 668-670

  Sun, C J ^a   Yang, J W ^a   Chen, Q ^a   Um, B W ^a   Anwar, M Zubair ^a   Khan, M Asif ^a   Temkin, H ^b   Weismann, D ^c   Brenner, I ^c  

^a APA Optronics   (United States)

^b Department of Civil and Environmental Engineering   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041842428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117800     Document Type: Article

References (13)

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