Characterization of MOVPE-grown (Al, In, Ga) N heterostructures by quantitative analytical electron microscopy

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1103-1108

  Lakner, H ^a   Brockt, G ^a   Mendorf, C ^a   Radefeld, A ^a   Scholz, F ^b   Harle V ^b   Off, J ^b   Sohmer, A ^b  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Convergent beam electron diffractdion (CBED); InGaN; Quantum wells; STEM; Z contrast

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; STRESS RELAXATION;

ALUMINUM NITRIDE; ATOMIC NUMBER CONTRAST IMAGING; CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); GALLIUM NITRIDE; INDIUM NITRIDE; SCANNING TUNNELING ELECTRON MICROSCOPY (STEM);

HETEROJUNCTIONS;

EID: 0031258794     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0002-2     Document Type: Article

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