메뉴 건너뛰기




Volumn 45, Issue 5, 1998, Pages 1092-1098

Advanced technologies for optimized sub-quarter-micrometer soi cmos devices

Author keywords

CMOS; Silicon on insulator technology

Indexed keywords

AMORPHIZATION; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

EID: 0032069643     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.669541     Document Type: Article
Times cited : (7)

References (22)
  • 5
    • 0023999599 scopus 로고    scopus 로고
    • "Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET's,"
    • 35, p. 426, Apr. 1988.
    • K. K. Young and J. A. Burns, "Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET's," IEEE Trans. Electron Devices, 35, p. 426, Apr. 1988.
    • IEEE Trans. Electron Devices
    • Young, K.K.1    Burns, J.A.2
  • 6
    • 0027839378 scopus 로고    scopus 로고
    • "Symmetric CMOS in fully-depleted siliconon-insulator using p+-polycrystalline Si-Ge gate electrodes," in
    • N. Kistler and J. Woo, "Symmetric CMOS in fully-depleted siliconon-insulator using p+-polycrystalline Si-Ge gate electrodes," in IEDM Tech. Dig., 1993, p. 727.
    • IEDM Tech. Dig., 1993, P. 727.
    • Kistler, N.1    Woo, J.2
  • 9
    • 0030647287 scopus 로고    scopus 로고
    • "An advanced Ge preamorphization salicide technology for sub-quarter-micrometer SOI CMOS devices," in
    • T. C. Hsiao, P. Liu, and J. C. S. Woo, "An advanced Ge preamorphization salicide technology for sub-quarter-micrometer SOI CMOS devices," in VLSI Symp. Tech. Dig., 1997, p. 95.
    • VLSI Symp. Tech. Dig., 1997, P. 95.
    • Hsiao, T.C.1    Liu, P.2    Woo, J.C.S.3
  • 10
    • 0031192158 scopus 로고    scopus 로고
    • "An advanced Ge preamorphization salicide technology for ultra-thin-film SOI CMOS devices,"
    • 18, p. 309, July 1997.
    • "An advanced Ge preamorphization salicide technology for ultra-thin-film SOI CMOS devices," IEEE Electron Device Lett., 18, p. 309, July 1997.
    • IEEE Electron Device Lett.
  • 13
    • 33747990039 scopus 로고    scopus 로고
    • "A low thermal budget self-aligned Ti suicide technology using germanium implantation for thin-film SOI MOSFET's,"
    • P. Liu, T. C. Hsiao, and J. C. S. Woo, "A low thermal budget self-aligned Ti suicide technology using germanium implantation for thin-film SOI MOSFET's," IEEE Trans. Electron Devices, to be published.
    • IEEE Trans. Electron Devices, to Be Published.
    • Liu, P.1    Hsiao, T.C.2    Woo, J.C.S.3
  • 16
    • 84864384696 scopus 로고    scopus 로고
    • 1-x/Si strained-layer heterostructures,"
    • QE-22, p. 1696, 1986.
    • 1-x/Si strained-layer heterostructures," IEEE J. Quantum Electron., QE-22, p. 1696, 1986.
    • IEEE J. Quantum Electron.
    • People, R.1
  • 19
    • 0002227180 scopus 로고    scopus 로고
    • "A new X-ray diffractometer design for thin-film texture, strain, and phase characterization,"
    • B6, p. 1749, 1988.
    • P. A. Flinn and G. A. Waychunas, "A new X-ray diffractometer design for thin-film texture, strain, and phase characterization," J. Vac. Sei. Technol, B6, p. 1749, 1988.
    • J. Vac. Sei. Technol
    • Flinn, P.A.1    Waychunas, G.A.2
  • 21
    • 33747947183 scopus 로고    scopus 로고
    • "Detailed characterization and analysis of the breakdown voltage in fully-depleted SOI n-MOSFET's," IEEE Trans. Electron Devices
    • 41, p. 1217, July 1994.
    • S. M. Sze, VLSI Technology, 2nd ed. New York: McGraw-Hill, 1988. [22] N. Kistler and J. Woo, "Detailed characterization and analysis of the breakdown voltage in fully-depleted SOI n-MOSFET's," IEEE Trans. Electron Devices, 41, p. 1217, July 1994.
    • VLSI Technology, 2nd Ed. New York: McGraw-Hill, 1988. [22] N. Kistler and J. Woo
    • Sze, S.M.1
  • 22
    • 0030421129 scopus 로고    scopus 로고
    • "Mechanism of the suppression of the floating-body effect for SOI MOSFET's with SiGe source structure," in
    • A. Nishiyama, O. Arisumi, and M. Yoshimi, "Mechanism of the suppression of the floating-body effect for SOI MOSFET's with SiGe source structure," in Proc. IEEE SOI Int. Conf., 1996, p. 68.
    • Proc. IEEE SOI Int. Conf., 1996, P. 68.
    • Nishiyama, A.1    Arisumi, O.2    Yoshimi, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.