Technology trends of silicon-on-insulator - its advantages and problems to be solved

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 429-432

  Yoshimi, Makoto ^a   Terauchi, Mamoru ^a   Murakoshi, Atsushi ^a   Takahashi, Minoru ^a   Matsuzawa, Kazuya ^a   Shigyo, Naoyuki ^a   Ushiku, Yukihiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; ULSI CIRCUITS; VOLTAGE CONTROL;

DRAIN BREAKDOWN VOLTAGE; SUBSTRATE FLOATING EFFECT;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0028753975     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)