Behavior of contact-silicided TFSOI gate-structures

IEEE International SOI Conference

Volumn , Issue , 1993, Pages 86-87

  Foerstner, Juergen ^a   Jones, Julie ^a   Huang, Margaret ^a   Hwang, Bor Yuan ^a   Racanelli, Marco ^a   Tsao, Jenn ^a   Theodore, N David ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT; THIN FILMS; TITANIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BOND AND ETCH BACK SILICON ON SILICON; GATE OXIDE; KIRKENDALL VOIDS; SILICIDE; SILICON SEPARATION BY IMPLANTED OXYGEN; THIN FILM SILICON ON INSULATOR;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0027816843     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)