Distribution of recombination currents in the space charge region of heterostructure bipolar devices

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 54-61

  Pallares J ^a   Marsal, L F ^a   Correig, X ^a   Calderer, J ^a   Alcubilla, R ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

Amorphous semiconductor devices; Semiconductor device modeling; Semiconductor heterojunctions; Space charge

Indexed keywords

AMORPHOUS MATERIALS; BOUNDARY CONDITIONS; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

SHOCKLEY READ HALL (SRH) RECOMBINATION CURRENTS;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0031673048     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658811     Document Type: Article

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