Amorphous-crystalline silicon heterojunction: Theoretical evaluation of the current terms

Solid State Electronics

Volumn 32, Issue 10, 1989, Pages 813-825

  Rubinelli, F ^a   Albornoz, S ^a   Buitrago, R ^a  

^a UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--APPLICATIONS; SOLAR CELLS--PERFORMANCE; SPECTRUM ANALYSIS;

AMORPHOUS SILICON DOPING; AMORPHOUS-CRYSTALLINE SILICON; CURRENT MECHANISM; CURRENT TERMS; GAP STATES; INTERFACE STATE DENSITY;

SEMICONDUCTOR DEVICES;

EID: 0024751379     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90057-9     Document Type: Article

References (16)

1. Amorphous-crystalline silicon junctions
2. Junction between amorphous germanium and monocrystal npSi
3. Electrical properties of n-amorphous/p-crystalline silicon heterojunctions
4. Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion Efficiency
5. Theoretical analysis of amorphous silicon solar cells: Effects of interface recombination