Genuine Wide-Bandgap Microciystalline Emitter Si-HBT with Enhanced Current Gain by Suppressing Homocrystallization

IEEE Transactions on Electron Devices

Volumn 39, Issue 9, 1992, Pages 2132-2138

  Miyajima, Takeshi ^a   Kubota, Yuichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; THIN FILMS;

HOMOCRYSTALLIZATION; MICROCRYSTALLINE EMITTERS;

BIPOLAR TRANSISTORS;

EID: 0026926459     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.155884     Document Type: Article

References (14)

1. G. L. Patton et al., “75-GhzfTSiGe-base heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 10, no, 2, pp, 171–173, 1990.
2. K. Sasaki et al., “A novel structure amorphous SiC:H emitter HBT using low temperature process,” in IEDM Tech. Dig., 1985, pp. 294–297.
3. K. Sasaki et al., “Micro-crystalline hetero-emitter with high injection efficiency for Si HBT,” in IEDM Tech. Dig., 1987, pp. 186–189.
4. M. Kondo et al., “Characterization of Si layer deposited on (100)Si substrates by plasma CVD and its application to HBT,” Japan. J. Appl. Phys., vol. 28, no. 9, pp. 1531–1535, 1989.
5. K. Baert et al., “Very low temperature (250°C) epitaxial growth of silicon by glow discharge of silane,” Appl. Phys. Lett., vol. 51, no. 23, 1922–1924, 1987.
6. K. Sasaki et al., “Study on current transport mechanism in amorphous SiC emitter HBT,” in Solid State Devices. Amsterdam, The Netherlands: Elsevier (North-Holand), 1988, pp. 661–664.
7. N. Yabumoto et al., “The role of hydrogen, oxygen and water in oxidation of hydrogen terminated silicon surface,” in Extended Abstracts 22nd Conf. on Solid State Devices and Materials, 1990, pp. 1067–1070.
8. G. L. Patton et al., “Physics, technology and modeling of polysilicon emitter contacts for VLSI bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-33, no. 11, pp. 1754–1768, 1986.
9. R. U. Martinelli, “The temperature dependence of the dc base and collector currents in silicon bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-23, no. 11, pp. 1218–1224, 1976.
10. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
11. H. Matsuura et al., “Electrical properties of n-amorphous/p-crystalline silicon heterojunctions,” J. Appl. Phys., vol. 55, no. 4, pp. 1012–1019, 1984.
12. J. Reichardt et al., “Band edges, Fermi level position and hydrogen concentration in surface near regions of a-Si:H,” J. Non-Crystall. Solids, vols. 59 and 60, pt. I, pp. 329–332, 1983.
13. M. Cuniot et al., “Study of the band discontinuities at the a-SiH/ c-Si interface by internal photoemission,” J. Non-Crystall. Solids, vols. 77 and 78, pp. 987–990, 1985.
14. M. Ugajin et al., “AC characteristics of super self-aligned Si HBTs with SiCx emitter,” in Extended Abstracts Int. Conf. on Solid State Devices and Materials, 1991, pp. 159–161.