Thermionic diffusion model for abrupt HBTs including self-heating inside the multilayer nonplanar device structure

Solid-State Electronics

Volumn 39, Issue 3, 1996, Pages 377-384

  Schneider, Jürgen ^a   Koenig, Eric ^b   Erben, Uwe ^a   Seiler, Ulrich ^b   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE; DIFFUSION; ELECTRIC CURRENTS; FERMI LEVEL; FINITE ELEMENT METHOD; HETEROJUNCTION BIPOLAR TRANSISTORS; MULTILAYERS; NUMERICAL METHODS; PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; TEMPERATURE DISTRIBUTION;

CURRENT FLOW; METAL AIRBRIDGES; MULTILAYER NONPLANAR DEVICE STRUCTURE; THERMIONIC DIFFUSION MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030102369     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00138-7     Document Type: Article

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