Properties of high heat-resistance µc-SiCx:H emitter silicon HBT′s

Japanese Journal of Applied Physics

Volumn 28, Issue 5A, 1989, Pages L754-L756

  Kuwagaki, Mamoru ^a   Imai, Kazuo ^a   Amemiya, Yoshihito ^a  

^a NTT LSI Laboratories ^*  (United States)

Author keywords

Bipolar transistor; C Si:H; Carbon; HBT; Heterojunction; Microcrystal; Si; Thermal stability

Indexed keywords

CARBON; HEAT TREATMENT--ANNEALING; THERMAL EFFECTS--STABILITY; TRANSISTORS, BIPOLAR--HETEROJUNCTIONS;

CARBON DOPING; HEAT RESISTANCE; THERMAL STABILITY;

SEMICONDUCTING SILICON;

EID: 0024663483     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.L754     Document Type: Article

References (4)

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