Determination of gap states density in PECVD a-Si:H from amorphous-crystalline heterojunctions

Proceedings of the International Semiconductor Conference, CAS

Volumn , Issue , 1995, Pages 111-114

  Marsal, L F ^a   Pallares, J ^a   Correig, X ^a   Calderer, J ^a   Alcubilla, R ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HETEROJUNCTIONS; PLASMA APPLICATIONS; SEMICONDUCTING SILICON;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 0029536451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)