An Amorphous SiC:H Emitter Heterojunction Bipolar Transistor

IEEE Electron Device Letters

Volumn 6, Issue 6, 1985, Pages 311-312

  Sasaki, K ^a   Furukawa, S ^a   Rahman, M M ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - VECTORS; SEMICONDUCTING BORON - DOPING; SEMICONDUCTING SILICON COMPOUNDS - AMORPHOUS; SEMICONDUCTOR DEVICES, MOS - PERFORMANCE;

COUNTING SEQUENCES; HAMMING DISTANCE; COMPLEMENTARY MOS (CMOS); HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); TEMPERATURE DEPENDENCE;

COMPUTER OPERATING SYSTEMS; TRANSISTORS, BIPOLAR;

EID: 0022077676     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26135     Document Type: Article

References (4)

1. M. M. Rahman and S. Furukawa, “Preparation and performance of a novel structure amorphous SiC/crystalline Si solar cell,” 4 in Proc. 1st Int. Conf. PVSEC (Kobe, Japan), 1984, pp. 172–176.
2. M. M. Rahman and S. Furukawa, “Preparation and electrical properties of an amorphous SiC/crystalline Si p + n heterostructure,” Japan J. Appl. Phys., vol. 23–5, pp. 515–524, 1984.
3. M. Ghannam et al, “ 'A silicon bipolar transistor with a hydrogenated amorphous emitter,” in IEDM Tech. Dig. (Boston, MA), 1984, pp. 746–748.
4. S. Krishna, J. Kuo, and I. S. Gaeta “An analog technology integrates bipolar, CMOS, and high-voltage DMOS transistor,” IEEE Trans. Electron. Devices, vol. 31–1, 1984.