Properties of n-Type Tetrahedral Amorphous Carbon (ta -C)/p-Type Crystalline Silicon Heterojunction Diodes

IEEE Transactions on Electron Devices

Volumn 42, Issue 4, 1995, Pages 577-585

  Veerasamy, Vijayen S ^a   Amaratunga, Gehan A J ^a   Park, Jin S ^a   MacKenzie, Harry S ^a   Milne, William I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARBON; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; THIN FILMS;

AMORPHOUS CARBON; CRYSTALLINE SILICON HETEROJUNCTION DIODE; CURRENT DENSITY VOLTAGE TEMPERATURE; FILTERED CATHODIC VACUUM ARC;

SEMICONDUCTOR DIODES;

EID: 0029290661     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372057     Document Type: Article

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