The Emitter-Base Interface Current in Silicon Bipolar Transistors with Emitters Deposited by Plasma-Enhanced CVD

IEEE Transactions on Electron Devices

Volumn 36, Issue 12, 1989, Pages 2889-2894

  Symons, J ^a   Nijs, J ^a   Mertens, Robert P ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; GLOW DISCHARGES; PLASMA DEVICES; SEMICONDUCTING SILICON;

EMITTER-BASE INTERFACE CURRENTS; PLASMA-ENHANCED CVD;

TRANSISTORS, BIPOLAR;

EID: 0024906771     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40951     Document Type: Article

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