Double-layer μc-Si/a-SiCx emitter in a silicon heterojunction bipolar transistor with a cutoff frequency of 47 GHz

Journal of the Electrochemical Society

Volumn 143, Issue 6, 1996, Pages 1949-1955

  Kondo, M ^a   Shiba, T ^a   Tamaki, Y ^a   Nakamura, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; METHANE; NATURAL FREQUENCIES; OPTIMIZATION; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CRITICAL FACTORS; CUTOFF FREQUENCY; HETEROEMITTER; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030163944     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836930     Document Type: Article

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