Suppression of the floating-body effect in partially-depleted SOI MOSFET's with SiGe source structure and its mechanism

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2187-2192

  Nishiyama, Akira ^a   Arisumi, Osamu ^a   Yoshimi, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

FLOATING BODY EFFECT; SUPPRESSION EFFECT;

MOSFET DEVICES;

EID: 0031341212     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644634     Document Type: Article

References (18)

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