Theoretical considerations on lateral spread of implanted ions

Japanese Journal of Applied Physics

Volumn 11, Issue 2, 1972, Pages 134-142

  Furukawa, Seijiro ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000699238     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.11.134     Document Type: Article

References (8)

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2. R.W. Bower, H.G. Dill, K.G. Aubuchon and S.A. Thomson: IEEE Trans. Ele'ctron Devices, ED-15 (1968) 757
3. J. Lindhard, M. Scharff and H.E. Schott: K. Danske Vidensk. Sel-sk. mat.-fys. Medd. 33 (1963) No. 14, Ρ.Ι
4. P. Sigmund and J. B. Sanders:Proc. Int.Conf. Application of Ion Beams to Semicondnc- tors Technology, Grenoble (Edition ophrys, 1967) p. 215
5. J.F.Gibbons: Proc. IEEE 56 (1968) 295
6. D.K.Brice:. Proc. Ist Int. Conf. Ion Implantation; (Gordon & Beach Science Pub., 1971) p.101
7. W.S.Johnson and J. F. Gibbons: Projected Range Statistics in Semiconductors (Standord University Bookstore, U.S.A. 1969)
8. F.H. Eisen, B. Welch, J.E. Westmoreland and J.W. Mayer:Proc. Int. Conf. Atomic Col’lision Phenomena in Solids, University of Sus-sex, (1969) Ρ.111