Theoretical study of minority carrier lifetimes due to auger recombination in n-type silicon

Japanese Journal of Applied Physics

Volumn 34, Issue 6R, 1995, Pages 3054-3058

  Jung, Hak Kee ^a   Taniguchi, Kenji ^a   Hamaguchi, Chihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Auger recombination; Degeneracy; Dielectric functions; Empirical pseudopotential; Impact ionization; Minority carrier lifetimes; Quadratic dependence; Screening

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; ELECTRONS; IONIZATION; PHONONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

AUGER RECOMBINATION; AUGER TRANSITION; IMPACT IONIZATION; MINORITY CARRIER LIFETIMES; QUADRATIC DEPENDENCE;

SEMICONDUCTING SILICON;

EID: 0029325189     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.3054     Document Type: Article

References (37)

1. M. A. Green 1984 IEEE Trans. Electron Devices 31 671.
2. A. W. Wieder 1980 IEEE Trans. Electron Devices 27 1402.
3. W. Gerlach, H. Schlangenotto and H. Maeder 1972 Phys. Status Solidi a 13 277.
4. C. Hu and W. G. Oldham 1979 Appl. Phys. Lett. 35 636.
5. C. H. Grein, P. M. Young and H. Ehrenreich 1992 Appl. Phys. Lett. 61 2905.
6. W. Bardyszewski and D. Yevick 1985 J. Appl. Phys. 58 2713.
7. W. Bardyszewski and D. Yevick 1985 J. Appl. Phys. 57 4028.
8. M. Takeshima 1984 Phys. Rev. B 29 1993.
9. A. R. Beattie and P. T. Landsberg 1958 Proc. R. Soc. London A 249 16.
10. L. Huldt 1971 Phys. Status Solidi a 8 173.
11. D. Hill and D. T. Landsberg 1976 Proc. R. Soc. London 347 547.
12. A. Haug and W. Schmid 1982 Solid-State Electron. 25 665.
13. W. Lochmann and A. Haug 1980 Solid State Commun. 35 553.
14. P. T. Landsberg 1970 Phys. Status Solidi 41 457.
15. A. Haug 1983 J. Phys. C 16 4159.
16. A. Sugimura 1981 IEEE J. Quantum Electron. 17 627.
17. N. K. Dutta and R. J. Nelson 1982 J. Appl. Phys. 53 74.
18. R. R. Gerhardts, R. Dornhaus and G. Nimtz 1978 Solid-State Electron. 21 1467.
19. M. G. Burt and C. Smith 1984 J. Phys. C 17 47.
20. S. Brand and R. A. Abrams 1984 J. Phys. C 17 201.
21. D. B. Lakes, G. F. Neumark and S. T. Pantelides 1990 Phys. Rev. B 42 5176.
22. Y. Kamakura, H. Mizuno, M. Yamaji, M. Morifuji, K. Taniguchi, C. Hamaguchi, T. Kunikiyo and M. Takenaka 1994 J. Appl. Phys. 75 3500.
23. J. S. Blakemore 1962 Semiconductor Statistics (Pergamon Press, New York).
24. P. T. Landsberg 1991 Recombination in Semiconductors (Cambridge Univ. Press, New York).
25. J. P. Walter and M. L. Cohen 1972 Phys. Rev. B 5 3101.
26. A. Haug and W. Ekardt 1975 Solid State Commun. 17 267.
27. M. Takeshima 1982 Phys. Rev. B 26 3192.
28. O. Jepson and O. K. Anderson 1971 Solid State Commun. 9 1763.
29. A. Haug 1977 Solid State Commun. 22 537.
30. J. Dziewior and W. Schmid 1977 Appl. Phys. Lett. 31 346.
31. J. D. Beck and R. Conradt 1973 Solid State Commun. 13 93.
32. R. Hacker and A. Hangleiter 1994 J. Appl. Phys. 75 7570.
33. J. G. Fossum, R. P. Mertens, D. S. Lee and J. F. Nijs 1983 Solid-State Electron. 26 569.
34. M. G. Burt 1981 J. Phys. C 14 3269.
35. Y. N. Abakumov and I. N. Yassievich 1977 Sov. Phys. Semicond. 11 766.
36. L. Passari and E. Susi 1983 J. Appl. Phys. 54 3935.
37. E. Yablonovitch and T. Gmitter 1986 Appl. Phys. Lett. 49 587.