Germanium diffusion and strain relaxation in Si/Si1-xGex/Si structures

Thin Solid Films

Volumn 183, Issue 1-2, 1989, Pages 183-190

  Van De Walle, G F A ^a   Van Ijzendoorn, L J ^a   Van Gorkum, A A ^a   Van Den Heuvel, R A ^a   Theunissen, A M L ^a   Gravesteijn, D J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; STRAIN; X-RAYS--DIFFRACTION;

HIGH RESOLUTION X-RAY DIFFRACTOMETRY; RUTHERFORD BACKSCATTERING SPECTROMETRY; SECONDARY ION MASS SPECTROSCOPY; STRAIN RELAXATION;

SEMICONDUCTING INTERMETALLICS;

EID: 45249129788     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(89)90443-4     Document Type: Article

References (10)

1. The Mechanisms of Relaxation in Strained Layer GeSi/Si Superlattices: Diffusion Vs. Dislocation Formation
2. Strain measurements and thermal stability of Si1− xGe x/Si strained layers