Measurement of Steady-State Minority-Carrier Transport Parameters in Heavily Doped n-Type Silicon

IEEE Transactions on Electron Devices

Volumn 34, Issue 7, 1987, Pages 1580-1589

  Alamo, Jesus A Del ^a   Swanson, Richard M ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

MINORITY CARRIER TRANSPORT; STEADY STATE TRANSPORT;

SEMICONDUCTING SILICON;

EID: 0023383760     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23122     Document Type: Article

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