Suppression of the floating-body effects in SOI MOSFETs by bandgap engineering

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 35-36

  Terauchi, Mamoru ^a   Yoshimi, Makoto ^a   Murakoshi, Atsushi ^a   Ushiku, Yukihiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL CIRCUITS; ELECTRIC BREAKDOWN; LINEAR INTEGRATED CIRCUITS; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BANDGAP ENGINEERING TECHNIQUE; FLOATING BODY EFFECT; GERMANIUM IMPLANTATION;

LSI CIRCUITS;

EID: 0029512250     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)