Formation of SiGe source/drain using Ge implantation for floating-body effect resistant SOI MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 954-959

  Nishiyama, Akira ^a   Arisumi, Osamu ^a   Terauchi, Mamoru ^a   Takeno, Shiroh ^a   Suzuki, Ken ^a   Takakuwa, Chie ^a   Yoshimi, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Bandgap; Floating body effect; Germanium; Implantation; Photoluminescence; RBS; SiGe; SOI MOSFET

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ENERGY GAP; ION IMPLANTATION; LEAKAGE CURRENTS; MOSFET DEVICES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

FLOATING BODY EFFECT; SHEET RESISTANCE; SILICON GERMANIDE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030078882     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.954     Document Type: Article

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