Analysis of High-Efficiency Silicon Solar Cells

IEEE Transactions on Electron Devices

Volumn 28, Issue 5, 1981, Pages 465-472

  Weaver, Harry T ^a   Nasby, R D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

SOLAR CELLS;

EID: 0019569495     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1981.20368     Document Type: Article

References (23)

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3. D. Kendall, presented at the Conf. Physics and Application of Lithium Diffused Silicon, NASA, Goddard Space Flight Center, Dec. 1969.
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10. M. A. Shibib, “Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells,” Ph.D. dissertation, Univ. of Florida, Gainsville, FL, 1979.
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14. R. D. Nasby and J. G. Fossum, “Characterization of p+nn+ BSF silicon concentrator solar cells,” in Rec. of 14th IEEE Photovoltaic Specialist Conf., 80CH1508-1, 1980, San Diego, CA.
15. M. P. Thekaekara, “Survey of quantized data on solar energy in its spectral distribution,” in Proc. Conf. COMPILES (Cooperation Mediterraenienne Sur L'Enerie Solaire), Bahran, Saudi Arabia, Nov. 1975.
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18. The code used here is a modified version of one developed in T. I. Chappell's, “V-groove multijunction solar cells,” Ph.D. dissertation, Univ. of California, Berkeley, 1978.
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