RELATIONSHIP BETWEEN **6**0Co AND 10-keV X-RAY DAMAGE IN MOS DEVICES.

IEEE Transactions on Nuclear Science

Volumn NS-33, Issue 6, 1986, Pages

  Benedetto, J M ^a   Boesch Jr , H E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - CURRENT; GAMMA RAYS - APPLICATIONS; SEMICONDUCTOR DEVICE TESTING - RADIATION EFFECTS; X-RAYS - APPLICATIONS;

CONDUCTION CURRENT TECHNIQUE; THRESHOLD VOLTAGE SHIFT;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022865689     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)