Determination of the charge-trapping characteristics of buried oxides using a 10-keV x-ray source

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1990-1994

  Pennise, Christine A ^a   Boesch, H Edwin ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCONDUCTIVITY; SEMICONDUCTOR DEVICES, MOS; X-RAYS;

BURIED OXIDES; CHARGE TRAPPING;

CAPACITORS;

EID: 0025592882     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101219     Document Type: Article

References (8)

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2. D. M. Fleetwood, S. S. Tsao, and P. S. Winokur, “Total-Dose Hardness Assurance Issue for SOI MOSFETs,” IEEE Trans. Nucl. Sci. NS-35, 1361–1367 (December 1988).
3. F. T. Brady, W. A. Krull, and S. S. Li, “Total Dose Radiation Effects for Implanted Buried Oxides,” IEEE Trans. Nucl. Sci. NS-36, 2187–2191 (December 1989).
4. J. M. Benedetto and H. E. Boesch, Jr., “The Relationship Between 60 Co and 10-keV X-Ray Damage in MOS Devices,” IEEE Trans. Nucl. Sci. NS-33, 1318–1325 (December 1986).
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6. H. E. Boesch, Jr., and T. L. Taylor, “Charge and Interface State Generation in Field Oxides,” IEEE Trans. Nucl. Sci. NS-31, 1273–1279 (December 1984).
7. H. E. Boesch, Jr., and J. M. McGarrity, “Charge Yield and Dose Effects in MOS Capacitors at 80K,” IEEE Trans. Nucl. Sci. NS-23, 1520–1525 (December 1976).
8. F. B. McLean, H. E. Boesch, Jr., and T. R. Oldham, “Charge Generation, Transport and Trapping,” Ch. 3 of Ionizing Radiation Effects in MOS Device & Circuits, T. P. Ma and P. V. Dressendorfer, eds., Wiley, New York (1989).