Tunable photodetectors based on strain compensated GaInAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2167-2173

  Shi, Yan ^a,b   Zhao, Jian H ^a,d   Sarathy, Jiten ^a,d   Lee Hao, ^a,b,c,d   Olsen, Gregory H ^b,c,d  

^a RUTGERS UNIVERSITY   (United States)

^b GOODRICH CORPORATION   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

PHOTORESPONSE PEAK SHIFT; QUANTUM CONFINED STARK EFFECTS (QCSE);

PHOTODIODES;

EID: 0031335615     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644631     Document Type: Article

References (35)

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