High-Speed Galnassb/Gasb Pin Photodetectors for Wavelengths to 2.3 μM

Electronics Letters

Volumn 22, Issue 3, 1986, Pages 137-138

  Bowers, J E ^a   Dewinter, J C ^a   Burrus, C A ^b   Pollack, M A ^b   Zyskind, J L ^b   Srivastava, A K ^b,c  

^a AT&T Bell Laboratories Holmdel Laboratories Holmdel ^*  (United States)

^b Crawford Hill Lab   (United States)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

Photodetectors; Photoelectric devices

Indexed keywords

PIN MESA PHOTODIODES; PSEUDORANDOM MODULATION; QUANTUM EFFICIENCY;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0022523926     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19860096     Document Type: Article

References (5)

1. tran, d. c., sigel, g. h., and bendow, b.: ‘Heavy metal fluoride glasses and fibres: A review’, J. Lightwave Technol., 1984, LT-2, pp. 566-586
2. lee, t. p., burrus, c. a., ogawa, k., and dentai, a. g.: ‘Very high-speed back-illuminated InGaAs/InP PIN punch-through photo-diodes’, Electron. Lett., 1981, 17, pp. 431-432
3. burrus, c. a., bowers, j. e., and tucker, r. s.: ‘Improved very high-speed packaged InGaAs punch-through photodiode’, p., burrus, c. a., ogawa, k., and dentai, a. g.: ‘Very high-speed back-illuminated InGaAs/InP PIN punch-through photo-diodes’, Electron. Lett., 1985, 21, pp. 262-263
4. dewinter, j. c., pollack, m. a., srivastava, a. k., and zyskind, j. l.: ‘Liquid phase epitaxial GalnAsSb lattice matched to (100) GaSb over the 1.71 to 2.33 λm wavelength range’, J. Electron. Mat., 1985, 14, pp. 729-747
5. bowers, j. e., hemenway, b. r., wilt, d. p., bridges, t. j., and burkhardt, e. g.: ‘26.5 GHz bandwidth InGaAsP lasers with tight optical confinement’, Electron. Lett., 1985, 21, pp. 1090-1091